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UTC Youshun Semiconductor -1N60L-T92-K N Channel Power MOSFET

UTC Youshun Semiconductor -1N60L-T92-K N Channel Power MOSFET

Product classification:【UTC】


Function overview:

1N60 data sheet
1.2A, 600 v n-channel power MOSFET
describe
UTC 1N60 is a high voltage MOSFET designed to
It has better characteristics, such as fast switching time and low gate.
Charging, low on-resistance and high robustness.
Avalanche characteristics. The power MOSFET is usually used for
Application of high-speed switch in power supply and PWM motor
Control, efficient DC-DC converter and bridge circuit.
characteristic
* VDS = 600V
* Inner diameter = 1.2A
* RDS(ON) =11.5Ω@VGS = 10V。
* Ultra-low gate charge (5.0nC typical)
* Low reverse transmission capacitance (CRSS = 3.0 pF typical)
* Fast switching ability
* Specified avalanche energy
* Improved dv/dt capability and high durability.

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